Ядерна фізика та енергетика Nuclear Physics and Atomic Energy   ISSN: 1818-331X (Print), 2074-0565 (Online)   Publisher: Institute for Nuclear Research of the National Academy of Sciences of Ukraine   Languages: Ukrainian, English, Russian   Periodicity: 4 times per year   Open access peer reviewed journal

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I. V. Mintyanskii¹, P. I. Savitskii¹, Z. D. Kovalyuk^1,*, V. T. Maslyuk², I. G. Megela<sup>2

1</sup> Institute for Materials Science Problems, National Academy of Sciences of Ukraine, Chernivtsi Branch, Chernivtsi, Ukraine
² Institute of Electron Physics, National Academy of Sciences of Ukraine, Uzhgorod, Ukraine

^*Corresponding author. E-mail address: chimsp@ukrpost.ua

Abstract: Changes of the conductivities along and across the layers as well as of the Hall coefficient are investigated in the temperature range of 80 to 400 K for n-InSe single crystals of different resistivity after their irradiation with different doses of high-energy electrons. For the high-resistive samples irradiated with a dose of 30 kGy non-monotonous variations of R_H and μ_⊥С with temperature are explained within a 2D-3D model of electron gas. It is established that at higher doses the mobility along the layers and vertical conductivity essentially decrease whereas the conductivity anisotropy and energy barrier between the layers increase significantly. The obtained results are explained due to the stronger contribution of 2D electrons after irradiation of n-InSe.

Keywords: indium selenide, electron irradiation, 2D-3D model, Hall coefficient, conductivity anisotropy.

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