Nuclear Physics and Atomic Energy

Nuclear Physics and Atomic Energy

  ISSN: 1818-331X (Print), 2074-0565 (Online)
  Publisher: Institute for Nuclear Research of the National Academy of Sciences of Ukraine
  Languages: Ukrainian, English, Russian
  Periodicity: 4 times per year

  Open access peer reviewed journal

 Home page   About 
Nucl. Phys. At. Energy 2018, volume 19, issue 2, pages 136-144.
Section: Radiation Physics.
Received: 29.03.2018; Accepted: 18.06.2018; Published online: 02.08.2018.
PDF Full text (ua)

Effect of the electron irradiation on electrical properties of n-InSe and their anisotropy

I. V. Mintyanskii1, P. I. Savitskii1, Z. D. Kovalyuk1,*, V. T. Maslyuk2, I. G. Megela2

1 Institute for Materials Science Problems, National Academy of Sciences of Ukraine, Chernivtsi Branch, Chernivtsi, Ukraine
2 Institute of Electron Physics, National Academy of Sciences of Ukraine, Uzhgorod, Ukraine

*Corresponding author. E-mail address:

Abstract: Changes of the conductivities along and across the layers as well as of the Hall coefficient are investigated in the temperature range of 80 to 400 K for n-InSe single crystals of different resistivity after their irradiation with different doses of high-energy electrons. For the high-resistive samples irradiated with a dose of 30 kGy non-monotonous variations of RH and μ with temperature are explained within a 2D-3D model of electron gas. It is established that at higher doses the mobility along the layers and vertical conductivity essentially decrease whereas the conductivity anisotropy and energy barrier between the layers increase significantly. The obtained results are explained due to the stronger contribution of 2D electrons after irradiation of n-InSe.

Keywords: indium selenide, electron irradiation, 2D-3D model, Hall coefficient, conductivity anisotropy.


1. G.W. Mudd et al. Tuning the bandgap of exfoliated InSe nanosheets by quantum confinement. Advanced Materials 25(40) (2013) 5714.

2. N. Balakrishnan et al. Room temperature electroluminescence from mechanically formed van der Waals IIIVI homojunctions and heterojunctions. Advanced Opt. Materials 2(11) (2014) 1064.

3. G.W. Mudd et al. High broad-band photoresponsivity of mechanically formed InSe-graphene van der Waals heterostructures. Advanced Materials 27(25) (2015) 3760.

4. N. Balakrishnan et al. Engineering p-n junctions and bandgap tuning of InSe monolayers by controlled oxidation. 2D Materials 4 (2017) 025043.

5. A. Segura et al. Three-dimensional electrons and two-dimensional electric subbands in the transport properties of tin-doped n-type indium selenide: Polar and homopolar phonon scattering. Phys. Rev. B 43(6) (1991) 4953.

6. J. Riera, A. Segura, A. Chevy. Transport properties of silicon doped n-indium selenide. Appl. Phys. A 54(5) (1992) 428.

7. J. Martinez-Pastor, A. Segura, A. Chevy. High-temperature behaviour of impurities and dimensionality of the charge transport in unintentionally and tin-doped indium selenide. J. Appl. Phys. 74(5) (1993) 3231.

8. J. Martinez-Pastor, A. Segura, A. Cantarero. Low temperature mobilities of 2-D electrons in indium selenide: neutral and ionized impurity scattering. Solid State Commun. 81(3) (1992) 287.

9. I.V. Mintyanskii, P.I. Savitskii, Z.D. Kovalyuk. Two-band conduction in electron-irradiated n-InSe single crystals. Phys. Status Solidi B 252(2) (2015) 346.

10. Z.D. Kovalyuk, I.V. Mintyanskyi, P.I. Savytskyi. Effect of electron irradiation on the anisotropy of the electrical conductivity in n-InSe. Journal of Nano- and Electronic Physics 9(6) (2017) 06013. (Ukr)

11. Zh. Burguen, M. Lanno. Point Defects in Semiconductors. Experimental Aspects (Moskva: Mir, 1985) 304 p. (Rus)

12. J. Martinez-Pastor et al. Shallow-donor impurities in indium selenide investigated by means of far-infrared spectroscopy. Phys. Rev. B 46(8) (1992) 4607.

13. Ph. Schmid. Electron-phonon interaction in layered semiconductors. Nuovo Cim. B 21(2) (1974) 258.

14. P. Gomes da Costa et al. First-principles study of the electronic structure of γ-InSe and β-InSe. Phys. Rev. B 48(19) (1993) 14135.

15. Ph. Houdy et al. Two-dimensional defects in InSe. J. Appl. Phys. 61(12) (1987) 5267.

16. E. Kress-Rogers et al. Cyclotrone resonance studies on bulk and two-dimentional conduction electrons in InSe. Solid State Commun. 44(3) (1982) 379.

17. F. Pomer et al. Electrical conductivity anisotropy. Phys. Status Solidi B 145(1) (1988) 261.

18. Z.D. Kovalyuk, I.V. Mintyanskyi. Electrical properties of InSe intercalated by anthracene molecules. Ukr. J. Phys. 27(4) (1982) 616. (Rus)