Ядерна фізика та енергетика Nuclear Physics and Atomic Energy   ISSN: 1818-331X (Print), 2074-0565 (Online)   Publisher: Institute for Nuclear Research of the National Academy of Sciences of Ukraine   Languages: Ukrainian, English   Periodicity: 4 times per year   Open access peer reviewed journal

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R. M. Vernydub¹, O. I. Kyrylenko¹, O. V. Konoreva^2,*, D. P. Stratilat², V. P. Tartachnyk², M. M. Filonenko¹, V. V. Shlapatska<sup>3

1</sup> National Pedagogical Dragomanov University, Kyiv, Ukraine
² Institute for Nuclear Research, National Academy of Sciences of Ukraine, Kyiv, Ukraine
³ L.V. Pisarzhevski Physical Chemistry Institute, National Academy of Sciences of Ukraine, Kyiv, Ukraine

^*Corresponding author. E-mail address: okskon@meta.ua

Abstract: The optical characteristics of the GaAs_1-хP_х output LEDs and LEDs irradiated with electrons with Е = 2 MeV, Ф = 10¹⁵ ÷ 10¹⁶ cm^-2 were studied. The width of the band gap of the GaAs_1-хP_х (х = 0.45) solid solution was estimated. Its growth is caused by the heating of carriers by the field of the p-n junction. The damage coefficients of the lifetime of minority charge carriers for irradiated GaAsP LEDs have been calculated and the consequences of exposure to radiation on the operational parameter Т₁, which determines the thermal stability of the diodes, have been analyzed.

Keywords: GaAsP, light emitting diode (LED), negative differential resistance, current-voltage characteristics.

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