Ядерна фізика та енергетика Nuclear Physics and Atomic Energy   ISSN: 1818-331X (Print), 2074-0565 (Online)   Publisher: Institute for Nuclear Research of the National Academy of Sciences of Ukraine   Languages: Ukrainian, English   Periodicity: 4 times per year   Open access peer reviewed journal

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T. I. Mosiuk^1,*, R. M. Vernydub¹, P. G. Lytovchenko², Yu. B. Myroshnichenko¹, D. P. Stratilat², V. P. Tartachnyk², V. V. Shlapatska<sup>3

1</sup> National Pedagogical Dragoмаnov University, Kyiv, Ukraine
² Institute for Nuclear Research, National Academy of Sciences of Ukraine, Kyiv, Ukraine
³ L. V. Pisarzhevski Physical Chemistry Institute, National Academy of Sciences of Ukraine, Kyiv, Ukraine

^*Corresponding author. E-mail address: t.i.mosiuk@npu.edu.ua

Abstract: We studied light-emitting diodes (LEDs) with quantum dots маde on the basis of a solid solution of In_0.21Ga_0.79N. Measurements of current-voltage characteristics and electroluminescence characteristics were carried out in the range of 77 ÷ 300 K. On the current-voltage characteristics in the range of 77 ÷ 150 K, areas of negative differential resistance, as well as a fine structure of radiation spectra, were detected. The results of the influence of electron irradiation (E_e = 2 MeV) on electroluminescence characteristics intensity and quantum yield of the studied samples are presented; the features of the temperature dependence of the glow intensity of irradiated LEDs were revealed.

Keywords: InGaN, light emitting diode, negative differential resistance, current-voltage characteristics, electroluminescence characteristics.

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