Nuclear Physics and Atomic Energy

ядерна ф≥зика та енергетика
Nuclear Physics and Atomic Energy

  ISSN: 1818-331X (Print), 2074-0565 (Online)
  Publisher: Institute for Nuclear Research of the National Academy of Sciences of Ukraine
  Languages: Ukrainian, English, Russian
  Periodicity: 4 times per year

  Open access peer reviewed journal

 Home page   About 
Nucl. Phys. At. Energy 2015, volume 16, issue 3, pages 238-241.
Section: Radiation Physics.
Received: 12.05.2015; Accepted: 30.07.2015; Published online: 12.10.2015.
PDF Full text (ua)

Influence of 2 MeV electrons irradiation on gallium phosphide light-emitting diodes reverse currents

V. G. Vorobiov1, O. V. Konoreva1, Ye. V. Malyi1,*, M. B. Pinkovska1, V. P. Tartachnyk1, V. V. Shlapatska2

1 Institute for Nuclear Research, National Academy of Sciences of Ukraine, Kyiv, Ukraine
2 SE "Radma", L.V. Pisarzhevskii Institute of Physical Chemistry, National Academy of Sciences of Ukraine, Kyiv, Ukraine

*Corresponding author. E-mail address:

Abstract: Results of reverse electrophysical characteristics study of red and green LEDs, initial and irradiated with 2 MeV electrons were given. It was found that reverse current was predominantly caused by carriers tunneling at Urev ≤ 9 V, and by the avalanche multiplication at Urev ≥ 13 V, in the range U = 9 ÷ 13 V both mechanisms are available. Current increase at high voltage areas (Urev > 19 V) is limited by the base resistance of diode. In the case of significant reverse currents (I > 1 mA) irradiation of diodes leads to the shift of reverse current-voltage characteristics into the high voltages direction.

Keywords: gallium phosphide, GaP, light-emitting diode, irradiation, electrons, current-voltage characteristics, reverse current, breakdown.


1. I.V. Grehov, Yu.N. Seriozhkin. Avalanche Breakdown of the p-n-Junction in Semiconductors (Leningrad: Energiya, 1980) 150 p. (Rus)

2. Yu.G. Grishin, N.V. Druzenko, O.V. Konoreva et al. Electrooptical properties of initial and irradiated GaP p-n-junctions. Metallofizika i Nanotekhnologii 30 (2008) 77. (Ukr)

3. I.M. Vikulin, Sh.D. Kurmashev, V.E. Gorbaev, S.K. Kriskiv. Degradation of the elements of the optical communication under irradiation. Scientific Papers of Odessa National Academy of Telecommunications (ONAT) 1 (2012) 57. (Rus)

4. K.S. Rzhevkin. The Physical Principles of Semiconductor Devices Action (Moskva: Izdatelstvo MGU, 1986) 255 p. (Rus)