Nuclear Physics and Atomic Energy


Nuclear Physics and Atomic Energy

  ISSN: 1818-331X (Print), 2074-0565 (Online)
  Publisher: Institute for Nuclear Research of the National Academy of Sciences of Ukraine
  Languages: Ukrainian, English, Russian
  Periodicity: 4 times per year

  Open access peer reviewed journal


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Nucl. Phys. At. Energy 2015, volume 16, issue 4, pages 362-366.
Section: Radiation Physics.
Received: 01.10.2015; Accepted: 10.12.2015; Published online: 12.02.2016.
PDF Full text (ua)
https://doi.org/10.15407/jnpae2015.04.362

Effect of neutron irradiation on characteristics of power nGaN/GaN light-emitting diodes

A. I. Vlasenko1, V. P. Veleschuk1,*, Z. K. Vlasenko1, M. P. Kisselyuk1, P. G. Lytovchenko2, I. V. Petrenko2, V. P. Tartachnyk2, M. B. Pinkovska2

1 V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kyiv, Ukraine
2 Institute for Nuclear Research, National Academy of Sciences of Ukraine, Kyiv, Ukraine


*Corresponding author. E-mail address: vvvit@ukr.net

Abstract: Effect of the reactor fast neutron flux (E = 2 MeV, = 2⋅1014 n/cm2) on the current-voltage, capacitance-voltage characteristics, the electroluminescence intensity of power nGaN/GaN LEDs on the SC and AuSn/Si substrates are studied. It was revealed that radiation hardness of InGaN/GaN heterostructures depend on the substrate.

Keywords: nGaN/GaN light emitting diode, irradiation, current-volt characteristic.

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