Ядерна фізика та енергетика Nuclear Physics and Atomic Energy   ISSN: 1818-331X (Print), 2074-0565 (Online)   Publisher: Institute for Nuclear Research of the National Academy of Sciences of Ukraine   Languages: Ukrainian, English, Russian   Periodicity: 4 times per year   Open access peer reviewed journal

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Abstract: Effect of the reactor fast neutron flux (E = 2 MeV, Ф = 2⋅10¹⁴ n/cm²) on the current-voltage, capacitance-voltage characteristics, the electroluminescence intensity of power ІnGaN/GaN LEDs on the SіC and AuSn/Si substrates are studied. It was revealed that radiation hardness of InGaN/GaN heterostructures depend on the substrate.

Keywords: ІnGaN/GaN light emitting diode, irradiation, current-volt characteristic.

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