Nuclear Physics and Atomic Energy


Nuclear Physics and Atomic Energy

  ISSN: 1818-331X (Print), 2074-0565 (Online)
  Publisher: Institute for Nuclear Research of the National Academy of Sciences of Ukraine
  Languages: Ukrainian, English
  Periodicity: 4 times per year

  Open access peer reviewed journal


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Nucl. Phys. At. Energy 2021, volume 22, issue 1, pages 56-61.
Section: Radiation Physics.
Received: 20.10.2020; Accepted: 02.04.2021; Published online: 19.06.2021.
PDF Full text (ua)
https://doi.org/10.15407/jnpae2021.01.056

Influence of radiation on the electrophysical parameters of GaAsP LEDs

R. M. Vernydub1, O. I. Kyrylenko1, O. V. Konoreva2,*, P. G. Litovchenko2, D. P. Stratilat2, V. P. Tartachnyk2, M. M. Filonenko1

1 National Pedagogical Dragomanov University, Kyiv, Ukraine
2 Institute for Nuclear Research, National Academy of Sciences of Ukraine, Kyiv, Ukraine


*Corresponding author. E-mail address: konoreva@nas.gov.ua

Abstract: The features of the current-voltage characteristics of LEDs obtained on the basis of GaP-GaAsP solid solutions are considered. The results of studies of the effect of electron irradiation (E = 2 MeV, F = 3 · 1014 ÷ 2.6 · 1016 cm-2) on the main electrophysical parameters of GaAs1-xPx diodes (x = 0.85 yellow, x = 0.45 orange) are given. The increase of differential resistance, the series resistance of the base, and barrier potential are revealed. The processes of recovery of the investigated quantities during isochronous annealing are analyzed, the mechanisms of degradation-recovery phenomena are discussed.

Keywords: GaAsP, light-emitting diode (LED), negative differential resistance, current-voltage characteristics.

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